• Back Grinding Wheel – Nano Pol

    • Wafer surface roughness and die strength can be improved
    • Grinding stress and wafer edge chipping can be reduced
    • Diamond at the tip can be distributed consistently
    • Porosity, pore shape and pore size control can be adjusted
    • Possible to grind Si wafer up to 17㎛ (Ultra thin wafer)
    • Outstanding grinding ability for TSV and normal(for finger print) compound wafer
  • Back Grinding Wheel – Resin

    • Rough grinding (Z1)-(#325~600)
    • Less edge chipping and grinding damage on thin wafer
    • Excellent grinding ability without compromising wheel life time
    • Fine grinding ( Z2 )-( #2000 ~ #4000 )
    • Easy grinding with low and consistent grinding current
    • Considerably longer life time than competitor’s
    • #3000~#4000 : Superior surface roughness and minimized sawing mark
  • Polishing Wheel – DP

    • Applying dry polishing after processing wafer with back grinding wheel.
    • Mirror surface processing by using soft wool felt and ZrO2 250mm for improving roughness.
  • Polishing Wheel-GDP

    • Applying dry polishing after processing wafer with back grinding wheel.
    • Improving roughness and realizing gathering effect by applying spherical silica.

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