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- Wafer surface roughness and die strength can be improved
- Grinding stress and wafer edge chipping can be reduced
- Diamond at the tip can be distributed consistently
- Porosity, pore shape and pore size control can be adjusted
- Possible to grind Si wafer up to 17㎛ (Ultra thin wafer)
- Outstanding grinding ability for TSV and normal(for finger print) compound wafer
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- Rough grinding (Z1)-(#325~600)
- Less edge chipping and grinding damage on thin wafer
- Excellent grinding ability without compromising wheel life time
- Fine grinding ( Z2 )-( #2000 ~ #4000 )
- Easy grinding with low and consistent grinding current
- Considerably longer life time than competitor’s
- #3000~#4000 : Superior surface roughness and minimized sawing mark
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- Applying dry polishing after processing wafer with back grinding wheel.
- Mirror surface processing by using soft wool felt and ZrO2 250mm for improving roughness.
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- Applying dry polishing after processing wafer with back grinding wheel.
- Improving roughness and realizing gathering effect by applying spherical silica.