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Back Grinding Wheel – Nano Pol
- Wafer surface roughness and die strength can be improved
- Grinding stress and wafer edge chipping can be reduced
- Diamond at the tip can be distributed consistently
- Porosity, pore shape and pore size control can be adjusted
- Possible to grind Si wafer up to 17㎛ (Ultra thin wafer)
- Outstanding grinding ability for TSV and normal(for finger print) compound wafer