YPI-MX-ODC

New designed detection units which are cross setting with dual 355nm (UV) laser.
The dual detector contributes enhanced detection for a slight scratch generated directional light scattered compared with conventional particle inspection system.
And also, 355nm laser is effective for isolated detection of SiC surface only.
Inspection time is within 5min for 4inch SiC wafer.

Transparent wafer, silicon wafer or LT wafer can be measured by YPI-MX-θDC. Maximum sensitivity is 0.1μm.s

Dual Laser Units

Inspection Result Images

MAP Result for LT Wafers

Scanning method Rotation or XY scanning with dual laser units
Work piece setting Manual or Auto loading (Cassette to Cassette)
Electric consumption AC100V/200V 30A
Maximum sensitivity 0.1μm
Reproducibility σ/X ≦10%
Inspection time Within 2 minutes for 4inch wafer
Target substrate and wafer SiC wafer, GaN wafer, LT wafer, film deposited wafer,
Transparent substrate and wafer
Appearance Dimension W900 mm×D1,000 mm×H1,757 mm(Manual)
W1,530 mm×D1,200 mm×H1,715 mm(Auto loading)
Weight Approx.500 Kg(Manual)
Approx.1000 Kg(Auto loading)

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