- Simultaneous measurement of Boron (or P) concentration and thin film thickness.
- Measure at a fast speed of <5s. (Existing FTIR: >30s, XRF: >10Min)
- Reference sample measurement is not required for every measurement.
- More sensitive measurement is possible with a long optical path and various angles of incidence.
- Very precise measurement is possible according to the initial baseline calibration accuracy setup.
- It is a non-destructive in-situ measurement method different from SIMS or ICP destructive measurement method.
- To ensure measurement accuracy, chemical analysis and correlation measured by SIMS, XRS, and ICP are possible.
- Since this measurement must be specialized for each customer’s process measurement, it cannot be used for other customer’s materials with the existing measurement setup.
The FILCON FTIR-SE is based on the core technology of FTIR and spectroscopic ellipsometry (SE), an established optical technique for the characterization of bulk materials, thin films, coatings, surface and embedded layers. The wavelength range achieved by these technologies is always application specific. The infrared (IR) wavelength range is of great interest because materials exhibit very different properties from those observed in the ultraviolet (UV) and visible wavelength ranges. For example, most undoped semiconductors are transparent, dielectrics have characteristic absorption couplings, metallic or doped semiconductors exhibit Drude absorption tails, etc. Therefore, IRSE (InfraRed Spectroscopic Ellipsometry) allows characterization of structural (thickness, interface, surface roughness, contamination), optical (optical constants), electrical (conductivity) and chemical information of materials.
Borophosphosilicate glass, commonly known as BPSG in semiconductor impurity processing, is a type of silicate glass that contains additives of boron and phosphorus. In silicate glasses such as PSG and Borophosphosilicate glass, BO molecular bonds have a special absorption function. The FILCON-FTIR-SE determines this and then allows analysis that can be correlated with the boron concentration based on an established initial baseline set-up (a set of samples with known boron concentration).
In the existing semiconductor FAB process, boron concentration is measured with FTIR analysis equipment or XRF equipment. However, KOVIS FILCON FTIR-SE equipment has problems such as troublesome sample preparation process for measurement, long measurement time, and high cost of measuring equipment. It is a state-of-the-art spectroscopic infrared ellipsoidal optical system measurement technology that solves
FTIR-SE technology boasts unparalleled fast measurement speed (<5s/point) while maintaining the measurement accuracy of the existing FTIR measurement technology. While XRF technology with a measurement speed of several tens of minutes or existing FTIR technology with a measurement speed of 40 seconds or more simply measures only the concentration of boron, FTIR-SE has the advantage of simultaneously measuring the boron concentration and the thickness (t) of a thin film. .
