Candeo™ is IDI’s next-generation post-CMP cleaning chemistry, engineered to significantly reduce particle and ionic contamination for improved yield and device reliability.
Designed for seamless use on Entrepix DSS-200 cleaning platforms and validated through the Entrepix CMP Foundry, Candeo™ delivers superior performance compared to conventional ammonium hydroxide (NH₄OH) cleans—without the environmental and handling drawbacks.
Key Benefits
Lower Defectivity, Higher Yield
- Up to 50% reduction in post-CMP defectivity vs. NH₄OH
- Effective removal of both particles and ionic contaminants
- Supports tighter defect specifications for advanced devices
Increased Total Usable Area (TUA)
- More good die per wafer
- Reduced yield loss from residual contamination
- Improved wafer-level consistency and performance
Expanded Process Window
- Stable performance across a wider range of process conditions
- Reduced sensitivity to variation
- Improved wafer-to-wafer repeatability
Seamless Platform Integration
- Optimized for Entrepix DSS-200 and OnTrak-based systems
- Compatible with existing process flows
- No requirement for brush or hardware changes
Accelerated Qualification & Adoption
- Validated through Entrepix CMP Foundry real-world testing
- Head-to-head benchmarking vs incumbent chemistries
- Reduces customer risk and speeds process development
Environmentally Benign
- Safe for discharge
- No odor → improved fab environment
- Reduced EHS burden vs traditional chemistries
Performance Highlights
- Demonstrated ~50% reduction in PCMP defects (>0.2 µm) vs NH₄OH in foundry testing
- Proven ability to run in the same tool configuration without modification
- Effective removal of challenging contamination including Al₂O₃ particles and Al³⁺ ions
Maximize TUA. Minimize defects.
Al2O3 Particle Removal
Candeo, in conjunction with the OnTrak DSS cleaning platform, is able to remove Al2O3 particles that are covalently bonded to the wafer surface.
Candeo Chemistry Delivers Significant Improvement in Al2O3 Particle Removal vs. Industry Standard Cleans
Al3+ Ion Contamination Reduction
Candeo’s Ability To Remove Al3+ Ions from Suspension Translates To Reduced On Wafer Alumina Contamination Levels.
Customers Reporting Significant Reduction in Residual Alumina Contamination on Wafers
PCMP Clean Performance for Silica Slurries
Head to head testing at Entrepix CMP Foundry demonstrates the performance benefits of Candeo vs NH4OH
Using Candeo results in a 50% reduction in PCMP defectivity vs. industry standard POR
Candeo™ vs. Conventional NH₄OH
Post-CMP Cleaning Comparison
Performance comparison across key process metrics for semiconductor post-CMP cleaning applications.
| Candeo™ (IDI) | Conventional NH₄OH Clean | |
|---|---|---|
| Defect Reduction | ~50% lower post-CMP defects (>0.2 µm) in testing | Baseline industry performance |
| Particle Removal | Highly effective removal of difficult contaminants (incl. Al₂O₃ particles) | Less effective on persistent or embedded particles |
| Ionic Contamination | Strong removal of metal ions (e.g., Al³⁺) | Limited ion removal efficiency |
| Total Usable Area (TUA) | Increased TUA → more good die per wafer | Lower TUA due to higher residual defectivity |
| Process Window | Wide, stable, and forgiving process range | Narrower process window, more sensitive to variation |
| Wafer-to-Wafer Consistency | High repeatability and consistent results | Greater variability depending on conditions |
| Tool Compatibility | Drop-in compatible with DSS-200 / OnTrak systems; no hardware changes required | Standard but often optimized around legacy processes |
| Integration Risk | Low—validated through CMP Foundry head-to-head testing | Established but may require tuning for advanced nodes |
| Qualification Speed | Accelerated via real-world foundry validation and benchmarking | Slower—typically requires internal process iteration |
| Environmental Profile | Environmentally benign, safe for discharge, no odor (per your spec) | Hazardous handling considerations; strong odor |
| EHS / Fab Environment | Favorable—improved operator environment | Higher EHS burden and handling requirements |







