When added to the rinse water at concentrations between 10% and 25% Tensor D-Rinse will reduce light scratching produced during the high-pressure rinse/de-chucking cycle.
Tensor D-Rinse will also facilitate removal of slurry chemistry, particles and pad residues, thus increasing the effectiveness of post-CMP (megasonic and brush) wafer cleaning processes.
Tensor D-Rinse is formulated to eliminate corrosion/oxidation of metals that can occur during wafer transport to 2nd and 3rd phases as well as delayed transport to the cleaning station.
Directions
It is recommended that Tensor D-Rinse be added to the high-pressure water rinse line at 10% to 25%. The types of post-CMP residues, length of time under the spray, spray pressure, slurry chemistry and other process factors ultimately determine specific dilutions and methods of use.
PCMP and Spray Cleaning
- Low-foam chemistries designed for post-CMP and single-wafer cleaning tools
- Ideal for removing slurry residue, particles, and chemical byproducts
- Ensure clean, residue-free surfaces for bonding and passivation
Certifications
